光电子能谱的X射线对TATB、TNT表面结构的影响  

Effect of X-ray Irradiation of XPS on the TATB, TNT Surface Structure

作　　者：徐涛[1] 王丽鑫[1] 

机构地区：[1]中国工程物理研究院化工材料研究所,四川绵阳621900

出　　处：《含能材料》2005年第B12期27-29,共3页Chinese Journal of Energetic Materials

摘　　要：采用X射线光电子能谱（XPS）中的双阳极big Kα射线（1253．6eV）作为辐射源，对TATB、TNT表面进行持续照射，并采用XPS对其表面效应进行了研究。研究结果表明TATB表面的NH2／NO2含量之比在前20min随着时间的延长逐渐增大，在30-60min之间呈稳定趋势；TNT在X射线照射下放气量很大，元素分析结果表明C元素和O元素含量在10min以后有升高的趋势，而对应的N元素含量相应减少。TATB and TNT are irradiated by X-rays Mg Kα （1253.6 eV） within the XPS instrument. At the same time, the surface structure are measured by XPS at different period. The XPS data give the clear evidence that there is an increase in the proportion of amine-nitrogen to nitro-nitrogen within 20 min, and appears stable between 30-60min; there are more gases released after TNT irradiated, and the XPS data show that the content of C and O has the tendency to increase within 10min, while the content of N decreases.

关 键 词：物理化学 X射线光电子能谱 炸药 表面结构 TATB TNT 

分 类 号：TQ136.12[化学工程—无机化工] TQ564