恒流作用下V型半导体桥电热特性研究  

A Study on the Galvanothermy of V Type Semiconductor Bridge under Constant Current

作　　者：胡剑书[1] 焦清介[1] 

机构地区：[1]北京理工大学爆炸科学与技术国家重点实验室,北京市100081

出　　处：《煤矿爆破》2005年第4期4-6,共3页Coal Mine Blasting

摘　　要：文章介绍了半导体桥(SCB)发火器件的工作机理。通过对恒流作用下V型半导体桥的电热特性建立数学模型,得出了SCB的夹角越小,发火电流越大,则发火时间越快的关系。但是,由于夹角受到半导体桥临界能量的影响,存在一个最小值,也是V型角的最佳角度。作者同时给出了一个计算升温时间的公式。The working theory of semiconductor bridge （SCB） is presented in this paper. Through mathematics modeling of the Galvanothermy of V Type Semiconductor Bridge under Constant Current, it is obtained that the fire current is great and fire time is little with the decrease of angle of SCB. However, due to the effect of SCB critical energy on the angle, there is the minimum value, which is also the best for V type angle. In addition, a formula used to calculate the time of temoeramre increase is showed.

关 键 词：半导体桥 V型角 发火时间 

分 类 号：TQ565.1[化学工程—炸药化工]