γ-辐照对纯Y_2SiO_5和Eu^(3+)∶Y_2SiO_5晶体光谱性能的影响  

Effect of Gamma Irradiation on the Spectral Properties of Undoped and Eu^(3+)-Doped Y_2SiO_5 Single Crystals

作　　者：庞辉勇[1] 赵广军[1] 介明印[1] 朱江[1] 何晓明[1] 徐军[1] 

机构地区：[1]中国科学院上海光学精密机械研究所

出　　处：《光学学报》2005年第12期1655-1658,共4页Acta Optica Sinica

基　　金：国家自然科学基金(50402008)资助课题

摘　　要：研究了γ-辐照前后纯Y2SiO5和Eu3+掺杂的Y2SiO5晶体吸收光谱的变化,辐照后,未退火和氢气退火的纯Y2SiO5晶体在260~270 nm和320 nm波段产生了附加吸收峰,分别是由F心和O-心的吸收引起的;经过空气退火的纯YSO晶体中,由于消除了氧空位,因此辐照后没有出现色心吸收峰。在Eu3+∶Y2SiO5晶体中,不但有相同的F心和O-心吸收峰,而且还有Eu2+离子在300 nm和390 nm的吸收峰。随着辐照剂量的增加,色心附加吸收峰增强。空气退火能减少Eu3+∶Y2SiO5晶体中的色心,而氢气退火能增加色心。The absorption spectra of undoped and Eu^3＋ -doped Y2SiO5 single crystals before and after gamma irradiation were studied. Additional absorption peaks at 260-270 nm and 320 nm were observed in irradiated Y2SiO5 crystal with no annealing or hydrogen-annealing, which were respectively caused by F centers and O- centers, Owing to the abserence of oxygen vacancy, there was no absorption peaks of color centers in air-annealed Y2SiO5 crystal, Additional absorption band of Eu^2＋ ions, which peaked at 300 nm and 390 nm, were produced in irradiated and H2-annealed Eu^3＋ ： Y2SiO5 crystal, except absorption bands of F centers and O- centers. Additional absorption increased with irradiation dose increasing. Air-annealing could decrease the concentration of color centers, and the H2-annealing could increase it.

关 键 词：光学材料 晶体 吸收光谱 辐照 色心 

分 类 号：O782[理学—晶体学]