半导体断路开关数值模拟  

Numerical simulation of semiconductor opening switch

作　　者：何锋[1] 苏建仓[1] 李永东[1] 刘纯亮[1] 孙鉴[1] 

机构地区：[1]西安交通大学电子物理与器件教育部重点实验室,陕西西安710049

出　　处：《强激光与粒子束》2005年第12期1893-1896,共4页High Power Laser and Particle Beams

基　　金：国家863计划项目资助课题

摘　　要：为了研究半导体断路开关(SOS)的截断过程及其在脉冲功率系统中的工作特性,建立了半导体断路开关的电流控制模型,对p+-p-n-n+掺杂结构的半导体断路开关进行了数值模拟研究。通过数值模拟,给出了p+-p-n-n+型半导体断路开关在正、反向泵浦过程中的载流子及电场分布,并获得了电流截断效应。计算结果表明,半导体断路开关的截断过程首先发生在p区。A current-controlled model of semiconductor opening switch（SOS） was developed to study the current opening effect and the physical process of SOS in pulsed power system. The p^＋ -p-n-n^＋ type SOS was analyzed on the basis of the model. The distributions of carriers and field in SOS were simulated during forward and reverse current pumping, and the current opening effect was obtained. The results show that the opening process starts first at the p-type region.

关 键 词：半导体断路开关 电流截断效应 脉冲功率 数值模拟 

分 类 号：TN78[电子电信—电路与系统]