P型微晶硅材料及在薄膜太阳电池上的应用  

P-μc-Si thin film material and its application to thin film solar cells

作　　者：朱锋[1] 魏长春[1] 张晓丹[1] 高艳涛[1] 孙建[1] 王岩[1] 韩晓艳[1] 赵颖[1] 耿新华[1] 

机构地区：[1]南开大学光电子薄膜器件与技术研究所光电子薄膜器件与技术天津市重点实验室光电信息技术科学教育部重点实验室,天津300071

出　　处：《功能材料与器件学报》2005年第4期423-426,共4页Journal of Functional Materials and Devices

基　　金：国家科技部重大基础研究项目(No.G2000028203No.G2000028202);教育部重点项目(No.02167)资助

摘　　要：采用VHF-PECVD技术沉积硼掺杂的P型微晶硅薄膜材料,在硅烷浓度(SC)为0.8%,反应气压93Pa时,随等离子体功率的增加,材料的晶化率和电导率先增大,后减小;薄膜的透过率随功率的增大而增加。将获得的P型微晶硅薄膜应用在微晶硅薄膜太阳电池中,电池结构为glass/p-μc-Si:H/I-μc-Si:H/n-μc-Si:H/A l,厚度约1μm,没有背反射电极的情况下,电池效率达到了7.32%(Voc=0.520V,Jsc=21.33mA/cm2,FF=64.74%)。P-type microcrystalline silicon thin film was deposited by VHF - PECVD technology. Under silane concentration （SC） 0. 8% and reaction pressure 93 Pa, with plasma power increasing, the crystalline volume fraction and conductivity of materials increase first, then decrease. The transmission increases with plasma power increasing. The p-μc-Si：H thin film was iμsed in μc-Si solar cells, the configuration of which is glass/pμc-Si：H/I-μe-Si：H/n-μc-Si：H/Al with thickness of about 1μm, without rear reflection. The conversion efficiency is 7.32% （ Voc =0. 520V,Jsc =21.33mA/cm^2 ,FF =64. 74% ）.

关 键 词：VHF—PECVD 微晶硅 太阳电池 

分 类 号：O484.4[理学—固体物理]