TiO_2纳米线阵列形成机理及其光致发光特性  

Formation Mechanism of Highly Ordered TiO_2 Nanowire Arrays and Its Photoluminescence Properties

作　　者：左娟[1] 孙岚[1] 宗晔[1] 赖跃坤[1] 聂茶庚[1] 林昌健[1] 

机构地区：[1]厦门大学固体表面物理化学国家重点实验室,福建厦门361005

出　　处：《电子元件与材料》2006年第1期12-15,共4页Electronic Components And Materials

基　　金：国家自然科学基金资助项目(20021002;20127302)

摘　　要：采用电化学诱导sol-gel法制备了锐钛矿型TiO2纳米线阵列,初步研究了形成机理和不同沉积时间对其光致发光强度的影响。结果表明:TiO2的生长包括:在含有Ti前驱体的电解质溶液中电沉积钛的羟基氧化物和热处理过程生成TiO2纳米线阵列两个步骤。电化学沉积时间为60min的TiO2纳米线阵列光致发光强度最大,这可能是TiO2与多孔氧化铝模板之间,以及TiO2纳米线的表面与内部之间的相互作用,使得表面氧空位浓度变化的结果。Highly ordered TiO2 nanowire arrays were prepared by an electrochemically induced sol-gel method, Its formation mechanism and the effect of deposition time on the photoluminescence intensities were discussed. It is found that the growth of nanowires involves electrodeposition of titanium oxyhydroxide from aqueous solution containing a Ti precursor and subsequent heat treatment. And the sample deposited for 60 min exhibited a maximum of photoluminescence intensity, It may be resulted from the concentration of oxygen vacancies on the surface area of TiO2 nanowire army, which changed with the interaction between AAO and TiO2, and surface area and inner area of TiO2 nanowires.

关 键 词：无机非金属材料 TiO2纳米线阵列 生长机理 光致发光特性 

分 类 号：O649.4[理学—物理化学]