掺硅对二氧化钛压敏电阻性能的影响  

Effect of SiO_2 on Titania Varistor Ceramics

作　　者：孟凡明[1] 

机构地区：[1]安徽大学信息材料与器件重点实验室,安徽合肥230039

出　　处：《电子元件与材料》2006年第1期27-29,共3页Electronic Components And Materials

基　　金：安徽省教育厅科研基金资助项目(2005KJ224);安徽大学教学研究基金资助项目(X200521);安徽大学信息材料与器件重点实验室基金资助项目

摘　　要：采取通用的陶瓷工艺,按配方(摩尔分数)TiO2+0.3%(BaCO3+Bi2O3)+0.075%Ta2O5+x%SiO2,其中x=0.1,0.2,0.3,0.4,0.5,制备试样。经过R-f,C-f和I-V测量,研究了SiO2对(Ba,Bi,Si,Ta)掺杂的TiO2基压敏陶瓷的压敏特性、电容特性及晶粒半导化的影响。结果表明:当x=0.3时,压敏电压最低(E10mA为8V.mm–1),电容量最大(C为30pF,1kHz)及晶粒电阻最小(1.4?)。Sample was prepared by the typical ceramics technics with the formula of TiO2＋0.3%（in mole fraction, the same below） （BaCO3＋Bi2O3）＋0.075%Ta2O5-x%SiO2, where, x=-0.1, 0.2, 0.3, 0.4, 0.5. Based on the results of measurements of resistance-frequency, electric capacity-frequency and electric current-voltage, The electrical properties such as breakdown voltage, electric capacity and the semi-conductivity of the samples were investigated. It is found that a sample having TiO2＋0.3% （BaCO3＋Bi2O3）＋0.075%Ta2O5＋0.3%SiO2 shows minimum breakdown voltage （E10mA= 8 V ·mm^-1）, maximum electric capacity （C = 30 pF, 1 kHz） and minimum grain resistance （1.4 Ω）.

关 键 词：电子技术 二氧化钛 压敏陶瓷 压敏电压 电容量 晶粒电阻 

分 类 号：TN304[电子电信—物理电子学] TN379