AlGaN/GaN HEMT功率放大器设计  

Design of AlGaN/GaN HEMT Power Amplifier

作　　者：林锡贵[1] 郝跃[1] 冯倩[1] 张进城[1] 

机构地区：[1]西安电子科技大学微电子研究所宽禁带半导体材料与器件教育部重点实验室,西安710071

出　　处：《半导体技术》2006年第1期52-55,共4页Semiconductor Technology

基　　金：国家重大基础研究项目(51327020301)

摘　　要：在小信号S参数不适于微波功率放大器的设计而大信号S参数不易获得的情况下,利用ADS软件,采用负载牵引法和输入端共轭匹配,成功的设计出AlGaN/GaN HEMT微波功率放大器。为了解决晶体管端口出现负阻的问题,设计了输入输出端并联电阻和反馈网络两种方法,最后得到理想的结果为:工作绝对稳定,带宽3.6GHz～8.0GHz,最高增益11.04dB,最大输出功率33dBm,最大PAE达到29.2%,电压驻波比较小。An AIGaN/GaN HEMT microwave power amplifier was designed successfully by load-pull method and conjugate match in input port using ADS, when small-signal S-parameters can＇t be used for design of microwave power amplifier and large-signal S-parameters were difficult to achieve. For the stability of the circuit, a comparison between shunt resistors method and feedback method was shown. Perfect results of 11.04dB gain, 33dBm output power and 29.2% PAE at 3.6GHz-8.0GHz bandwidth were achieved.

关 键 词：高电子迁移率场效应晶体管 功率放大器 ADS负载牵引 共轭匹配 

分 类 号：TN386[电子电信—物理电子学] TN722.75