低噪声CMOS电荷灵敏前置放大器  

Low-noise CMOS charge-sensitive preamplifier

作　　者：邓智[1] 康克军[1] 程建平[1] 刘以农[1] 

机构地区：[1]清华大学工程物理系,北京100084

出　　处：《清华大学学报（自然科学版）》2005年第12期1643-1645,1649,共4页Journal of Tsinghua University(Science and Technology)

基　　金：国家自然科学基金重点资助项目(10135040)

摘　　要：为了满足辐射探测器的读出密度要求,完成了低噪声CM O S专用集成电荷灵敏前置放大器的设计和测试。采用0.6μm CM O S工艺,电路面积为260μm×210μm,功耗为15.9mW,比传统的电荷灵敏前放的电路密度至少提高了3个数量级。测量得到的噪声结果为:在成形时间为1μs时,零电容噪声为1 377.1 e,电容噪声斜率为43.7 e/pF。噪声的实测结果和理论分析比较吻合,间接测量了使用工艺NM O S的1/f噪声系数,为低噪声设计提供了参考依据。A low-noise CMOS charge sensitive preamplifier was built using a 0. 6 μtm CMOS process to achieve the readout density requirement for radiation detectors. The preamplifier costs were 260/μm × 210/μm in area and 15.9 mW in power consumption. The density was increased by a factor of at least 3 orders of magnitude compared to traditional charge sensitive preamplifiers. Measured results show that the equivalent noise charge is 1 377. l e of zero-capacitance noise and 43.7 e/pF of capacitance ratio with a shaping time of 1 μs. This noise level is in agreement with theoretical analysis but needs to be improved further. The 1/f noise coefficient of the NMOS device in the process was also calculated.

关 键 词：核电子学 电荷灵敏前置放大器 CMOS专用集成电路 

分 类 号：TL821[核科学技术—核技术及应用] TN4[电子电信—微电子学与固体电子学]