Influence of Ambient Gas and Oxygen Pressure on Nd∶LuVO_4 Films Grown by Pulsed Laser Deposition  

作　　者：Wang Xiaoxia Li Hongxia Zhang Huaijin Wang Jiyang Shen Mingrong Fang Liang 

机构地区：[1]State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China [2]School of Physical Science ＆ Technology, Suzhou University, Suzhou 215006, China）

出　　处：《Journal of Rare Earths》2005年第4期454-454,共1页稀土学报（英文版）

摘　　要：The （ 200 ） dominated Nd： LuVO4 films were fabricated successfully on polished SlOE under different ambient gases and different oxygen pressures. By XRD, it is shown that a film with good crystallization is deposited under oxygen and the optimal pressure is 20 Pa. The surface morphology of Nd：LuVO4 films was observed by AFM, and it is found that oxygen pressure influences the surface morphology of Nd ：LuVO4 films. The ratio of content of Nd：LuVO4 films was estimated according to the yields of Lu and V by using RBS spectra, this ratio is in good agreement with the target composition. The effective index refractive of every mode is 2.0044, 1.7098, measured by prism coupler method.The （ 200 ） dominated Nd： LuVO4 films were fabricated successfully on polished SlOE under different ambient gases and different oxygen pressures. By XRD, it is shown that a film with good crystallization is deposited under oxygen and the optimal pressure is 20 Pa. The surface morphology of Nd：LuVO4 films was observed by AFM, and it is found that oxygen pressure influences the surface morphology of Nd ：LuVO4 films. The ratio of content of Nd：LuVO4 films was estimated according to the yields of Lu and V by using RBS spectra, this ratio is in good agreement with the target composition. The effective index refractive of every mode is 2.0044, 1.7098, measured by prism coupler method.

关 键 词：pulsed laser deposition Nd ： LuVO4 films oxygen pressure rare earths 

分 类 号：O614.33[理学—无机化学] O484[理学—化学]