反应溅射a-GeNx:H薄膜的喇曼和电子自旋共振谱  

Studies on Raman and ESR in Reactiveiy Sputtered a-GeN_x:H Films

作　　者：陈光华[1] 张仿清[1] 贾炜 陈伟[1] 

机构地区：[1]兰州大学电子材料研究所物理系

出　　处：《固体电子学研究与进展》1989年第4期394-395,共2页Research & Progress of SSE

基　　金：国家自然科学基金资助

摘　　要：为了进一步提高非晶硅太阳电池的光-电转换效率,必须对太阳的全光谱进行有效的吸收,因而就必须获得光学带隙(Eopt)可调制的非晶薄膜材料,即要制备出Eopt比a-Si:H(1.8eV)大的和小的(称窄带隙材料)薄膜材料,以使它有效地吸收太阳光谱中的短波和长波部分;亦即需要将“单层”太阳电池(pin-a-Si:H)改进为“多层”或称为“叠层”太阳电池。在这一方面已有a一Si:H/a-SiGe:H叠层电池,共效率η>13％。我们将N和H掺入a-Ge中,可获得窄带隙a-GeNx:H光电薄膜材料,试图改进非晶硅太阳电池的效率。Raman and ESR spectra of hydrogenated amorphous germanium, nitride (a-GeNx:H) are presented for tha first time. The a-GeNx:H films were prepared by a rf-reactive sputtering of a poly-Ge target using Ar + N2 + H2 mixture gases. We systematically investigated the influences of N and H-coatent, illumination time and annealing temperature on ESR, and measured 'in situ' high temperature ESR characteristic. Here we suggest that S-W effect in a-GeNx:H film is a recombination-induced process and consider that H also plays aa important role in this process.

关 键 词：а-GeNx:H 簿膜 喇曼 共振谱 溅射 

分 类 号：TN304.055[电子电信—物理电子学]