固体摄象器件的发展趋势  

Development Trend of Solid State Image Devices

作　　者：由中强 

机构地区：[1]河北半导体研究所

出　　处：《光电子技术》1989年第3期20-26,共7页Optoelectronic Technology

摘　　要：本文重点介绍电荷耦合器件(CCD)的发展状况和最近出现的一些新器件的结构,如:虚相CCD摄象器;电荷引发器件摄象器;帧-行间转移CCD摄象器及具有三维集成电路雏型的叠层式CCD摄象器.This paper comprehensively describes the advantages of solid state image devices. The recent development of charge coupled devices(CCD) is emphasized. Several novel recently developed are presented, such as virtual phase CCD image sensor, charge priming device image sensor, frame-interline transfer CCD image sensor and overliad CCD image sensor with three dimensional integrated circuit.

关 键 词：摄象器件 固体 电荷耦合器件 

分 类 号：TN948.41[电子电信—信号与信息处理]