影响碳化硼陶瓷致密化的因素  

Effecting Factors on Compacting Boron Carbide Ceramics

作　　者：张辉[1] 穆柏春[1] 唐立丹[1] 

机构地区：[1]辽宁工学院材料与化学工程学院,辽宁锦州121001

出　　处：《辽宁工学院学报》2005年第6期378-381,共4页Journal of Liaoning Institute of Technology(Natural Science Edition)

基　　金：辽宁省自然科学基金资助项目(9910300401);辽宁省专利局科研项目资助

摘　　要：从纯碳化硼的无压烧结、添加烧结助剂、烧结时加压等方面介绍了碳化硼陶瓷活化烧结致密化的方法,综述了国内外在不同的烧结工艺下制备的碳化硼陶瓷材料的性能,进而分析了各种方法提高碳化硼陶瓷致密度的机制,比较了各种烧结方法的优缺点。结果表明:通过综合各种措施可以提高碳化硼陶瓷的致密度。The pyknosis method of activated sintering of boron carbide ceramics was presented through some aspects of no-voltage sintering, adding to sintering assistant, forcing while sintering of pure boron carbide. The properties of boron carbide ceramics which were prepared at different sintering both at home and abroad were summarized. The mechanism of improving density of boron carbide ceramics through various methods was analysed. The merits and faults of various sintering methods were compared, the result indicates that it can improve density of boron carbide ceramics by synthesizing various measures.

关 键 词：碳化硼 致密化 热压烧结 常压烧结 

分 类 号：TM286[一般工业技术—材料科学与工程]