Effect of DBR Geometry on Reflectivity and Spectral Linewidth of DBR Lasers  

DBR几何特性对其反射率和DBR激光器线宽的影响(英文)

作　　者：方达伟[1] 张艺[1] 李晨霞[1] Manzaneda C 李波[1] 

机构地区：[1]中国计量学院信息工程学院 [2]Department of Electrical Engineering,University of Illinois,USA

出　　处：《Journal of Semiconductors》2005年第12期2315-2319,共5页半导体学报（英文版）

基　　金：浙江省自然科学基金资助项目(批准号:602082)~~

摘　　要：The linewidths of InGaAs-GaAs-AlGaAs DBR lasers with varied DBR dimensional parameters are measured and analyzed. These lasers were built with different DBR grating lengths and depths in order to explore the effect of the size of the DBR on its coupling coefficient and reflectivity,and hence on the linewidth of the laser diodes. The linewidths were measured by employing a self heterodyne linewidth measurement system. The experimental and calculated data for DBR reflectivity and spectral linewidth are given. The relationship between these data and the dimensions of the DBR is analyzed. Based on this analysis,the effect of the DBR geometry on the linewidth of the lasers is explored. The results give useful information related to the design and fabrication of such DBR lasers.对DBR几何参量不同的InGaAsGaAsAlGaAsDBR半导体激光器样品的输出线宽进行了测量和分析.样品激光器DBR光栅取不同的长度和蚀刻深度以考察其几何特性对耦合系数、反射率以及输出线宽的影响.线宽通过自差频测量系统测量得到.对实验结果与理论计算结果进行了对比.对测得的光学特性参数与几何特性参数之间的联系进行了分析.在此基础上讨论了DBR几何特性对激光器输出线宽的影响.研究结果为该类型DBR半导体激光器的制造提供了有用的信息.

关 键 词：LINEWIDTH distributed Bragg reflector InGaAs-GaAs-AlGaAs semiconductor lasers 

分 类 号：TN248[电子电信—物理电子学]