共熔法在玻璃中生长的半导体量子点的电偶极矩  

Electric Dipole Moment of Graded Spherical Semiconductor Quantum Dots Embedded in Glass

作　　者：田强[1] 刘惠民[1] 樊洁平[1] 杨永刚[1] 

机构地区：[1]北京师范大学物理系,北京100875

出　　处：《Journal of Semiconductors》2005年第12期2374-2377,共4页半导体学报（英文版）

摘　　要：理论分析了共熔法在玻璃中生长的CdSe0.9S0.1半导体量子点在恒定外场作用下的电偶极矩.由于玻璃介质与量子点的互溶,共熔法在玻璃中生长的量子点是球形梯度量子点,其相对介电常数沿径向的变化可以采用指数函数模拟.在球坐标系中通过分离变量法求解电势满足的方程,得到球形梯度量子点的电偶极矩与量子点体积成正比,以及与半导体和玻璃介电常数的定量关系.Semiconductor quantum dots embedded in glass, prepared with the method of co-melting, are graded spherical. Considering the gradation profile as a radial exponential function, the electric potential equation is solved in spherical coordinates. The electric dipole moment of the graded spherical quantum dot in glass is obtained. The results show that the dipole moment is proportional to the volume of the quantum dot. The relation of the dipole moment to the permittivity is presented.

关 键 词：球形梯度量子点 电偶极矩 极化 玻璃 

分 类 号：TN304[电子电信—物理电子学]