硅纳米线的电学特性  

Electrical Properties of Silicon Nanowires

作　　者：裴立宅[1] 唐元洪[1] 张勇[1] 郭池[1] 陈扬文[1] 

机构地区：[1]湖南大学材料科学与工程学院,长沙410082

出　　处：《电子器件》2005年第4期949-953,共5页Chinese Journal of Electron Devices

基　　金：教育部博士点基金资助项目(20040532014)

摘　　要：总结了硅纳米线在电学特性方面的研究进展,重点分析了本征及掺杂硅纳米线的载流子浓度与迁移率、场发射及电子输运特性。研究表明通过对硅纳米线进行掺杂可提高载流子浓度及迁移率、场发射和电子输运性能,随硅纳米线直径的减小其电学性能增强。因此,硅纳米线在场效应晶体管及存储元件等纳米器件方面具有极大的应用前景。The recent studies on electrical properties of silicon nanowires are introduced. Carrier concentration and mobility, field emission and electron transport properties of intrinsic and doped silicon nanowires are analyzed. The research results show that carrier concentration and mobility, field emission and electron transport properties can be improved by doping silicon nanowires. Electrical properties of silicon nanowires strengthen with the decrease of diameter of silicon nanowires. So silicon nanowires exhibit excellent application promising in nanoscale electron devices such as field effect transistor and memory cell.

关 键 词：硅纳米线 电学特性 场发射 电子输运 

分 类 号：TN305.3[电子电信—物理电子学] TN304.1