A l互连线微结构的EBSD分析与电徙动可靠性  

EBSD analysis of the microstructure of al interconnects and their electromigration reliability

作　　者：王俊忠[1] 刘志民[1] 钟涛兴[1] 张隐奇[1] 李志国[1] 吉元[1] 

机构地区：[1]北京工业大学固体微结构与性能研究所,北京100022

出　　处：《中国体视学与图像分析》2005年第4期218-220,共3页Chinese Journal of Stereology and Image Analysis

基　　金：国家自然科学基金委重点基金(69936020);军用模拟集成电路国防科技重点实验室基金(51439040203)

摘　　要：采用电子背散射衍射技术(EBSD),测量了微电子器件中A l互连线的晶粒结构、晶体学取向和晶界特征。A l互连线制备及退火工艺影响着互连线的显微结构和电徙动中值寿命(MTF)。结果表明,退火后晶粒明显长大,晶粒呈近竹节结构,形成很强的{111}织构,并使小角度晶界增加,从而提高了A l互连线的电徙动可靠性。The grain structure, the crystallographic orientation and the grain boundary character of Al interconnects were measured by using electron backscatter diffraction technique. Processing and annealing influenced the microstructure and the mean failure time due to electromigration （EM）for the Al interconnects. During annealing the grain size increased, leading to the development of a near bamboo structure, with an increase in the {111 } texture and in the fraction of low angle grain boundaries, resulting in the improvement in EM reliability of the Al interconnects.

关 键 词：Al互连线 EBSD 晶粒结构 电徙动 

分 类 号：TN403[电子电信—微电子学与固体电子学]