AlAs/GaAs分布布拉格反射镜(DBR)的反射谱拟合与优化生长  

Reflectance Spectrum Simulation and Optimized Growth of AlAs/GaAs Distributed Bragg Reflector(DBR)

作　　者：张冠杰 [1] 舒永春 [1] 皮彪 [1] 姚江宏 [1] 林耀望 [2] 舒强 [2] 刘如彬 [1] 王占国 [1] 许京军 [1] 

机构地区：[1]天津市南开大学弱光非线性光子学材料先进技术及制备教育部重点实验室,天津,300071 [2]天津市南开大学弱光非线性光子学材料先进技术及制备教育部重点实验室,天津,300071,中国科学院半导体研究所半导体材料重点实验室,北京,100083

出　　处：《人工晶体学报》2005年第6期977-981,共5页Journal of Synthetic Crystals

摘　　要：对分布布拉格反射镜(DBR)的原理和特征进行了分析,使用传输矩阵方法计算了不同对数GaAs/A lAs反射镜的反射率曲线。利用分子束外延(MBE)设备生长了波长为920nm和980nm的半导体多层膜DBR反射镜,分析了实验测得的反射谱与理论拟合曲线之间的差异及其产生原因,实现了材料的优化生长,获得了反射率大于99%、中心波长和带宽接近理论计算值的DBR材料。该DBR的反射谱拟合与优化生长研究可应用于VCSEL和VECSEL激光器。The theories and characteristics of distributed bragg reflector （DBR） are described in this paper. The semiconductor samples of 920nm and 980nm DBR structures were designed and grown by MBE. The reflectivity of semiconductor DBR with different AlAs/GaAs pairs was calculated by transfer matrix method. We compared the calculated and experiment reflectance spectra and analyzed their differences. By optimizing growth condition,a good quahty DBR material （maximal reflectivity 〉 99%, center wavelength and bandwidth near calculated value） was acquired. Experimental results indicate that our simulation is an important guideline for fabricating the DBR structures which can be used in VCSEL and VECSEL.

关 键 词：分布布拉格反射镜 理论计算 优化生长 高反射率 

分 类 号：TN304.054[电子电信—物理电子学]