Monte Carlo方法计算定量俄歇电子能谱分析中的背散射因子(英文)  

Monte Carlo calculation of backscattering factor for quantitative AES analysis

作　　者：谈文舒[1] 丁泽军[1] 张增明[1] 

机构地区：[1]合肥微尺度物质科学国家实验室中国科学技术大学物理系,安徽合肥230026

出　　处：《电子显微学报》2005年第6期541-546,共6页Journal of Chinese Electron Microscopy Society

基　　金：National Natural Science Foundation of China(No.10025420,No.90206009)

摘　　要：本文通过Monte Carlo方法模拟计算了定量俄歇电子能谱分析(如对Ni的L3VV俄歇电子和Pt的M5N67N67俄歇电子)中的背散射因子。由于计算中结合了相关领域的各种最新进展,因此该新计算可以为定量俄歇电子能谱分析提供更为准确的参数。Using a Monte Carlo simulation method a novel calculation on the backscattering factor in quantitative Auger electron spectroscopy （AES） analysis has been performed, for Ni L3VV and Pt M5N67 N67 Auger excitation as examples. Up-to-date advances in the related fields have been considered in the calculation, leading to more accurate results for quantitative AES analysis.

关 键 词：背散射因子 俄歇电子能谱(AEs) 蒙特卡洛(Monte Carlo) 

分 类 号：O657.62[理学—分析化学]