AMR薄膜弱磁场传感头的优化设计  

Optimization Design of AMR Film Weak Magnetic Field Sensor

作　　者：史东强[1] 郑梁[1] 秦会斌[1] 

机构地区：[1]杭州电子科技大学CAE所,浙江杭州310018

出　　处：《杭州电子科技大学学报（自然科学版）》2005年第6期10-13,共4页Journal of Hangzhou Dianzi University：Natural Sciences

基　　金：浙江省自然科学基金项目(Z104621);模拟集成电路国家重点实验室基金项目

摘　　要：镍铁基合金薄膜是各向异性磁电阻传感器常用的传感材料,基于光刻工艺的弱磁场传感器的灵敏度与传感头的图形设计有关,传感头磁电阻图形的优化设计可以使薄膜具有更好的各向异性磁电阻效应。在研究了基于光刻工艺的弱磁场传感器基础上,为了提高弱磁场的测试灵敏度,结合具体的光刻工艺对传感头的磁电阻图形作了优化设计。结合对具体的材料分析阐述了设计原理,给出了设计对灵敏度和输出产生的影响。The ferronickel base alloy film is commonly used in AMR sensors. The sensitivity of the weak magnetic field sensor based on photo - etching technology relates to graphic design of the sensing head part. The optimization design of the figure of the film can make it have better AMR effect. The article has studied the weak field sensor based on photo - etching technology. In order to improve the sensitivity to the weak field, the figure design of the magnetoresistance film is optimized based on the photo- etching technology. The principle is explained as the same time as the material is analyzed, and the influence of the design to the sensitivity and output is also given.

关 键 词：各向异性磁电阻 磁场 传感器 优化设计 AMR薄膜弱磁场传感头 

分 类 号：TN304.055[电子电信—物理电子学]