SiC电子霍耳迁移率的计算  

A Calculation of Electron Hall Mobility in SiC

作　　者：王平[1] 杨银堂[1] 杨燕[1] 

机构地区：[1]西安电子科技大学微电子所宽禁带半导体材料与器件教育部重点实验室,陕西西安710071

出　　处：《计算物理》2006年第1期80-86,共7页Chinese Journal of Computational Physics

基　　金：教育部重点(02074);国防科技预研基金(51408010601DZ1032)资助项目

摘　　要：基于对自身能带结构的分析以及各向同性弛豫时间近似法,采用三椭球等能面、抛物线性简化,建立了适于模拟n型6H-SiC电子霍耳迁移率和霍耳散射因子的解析模型,精确描述了不同散射机制对于6H-SiC低场电子输运特性的影响.计算结果与实测值有很好的一致性.With analysis of conduction band structure and isotropic relaxation time approximation, an analytical model for the electron Hall mobility and Hall scattering factor of n-type 6H-SiC is proposed. The impact of different scattering mechanisms on the low field electron transport in 6H-SiC is illustrated clearly. Three ellipsoidal and parabolic constant energy surfaces simplification are used. The calculated results are in good agreement with physical measurements.

关 键 词：6H碳化硅 电子霍耳迁移率 霍耳散射因子 解析模型 

分 类 号：TN304.2[电子电信—物理电子学]