用非线性电流源法分析微波振荡器的相位噪声  

Phase noise analysis in microwave MESFET oscillators by nonlinear current method

作　　者：陈昌礼 洪兴楠[1] 高葆新[1] 

机构地区：[1]清华大学电子工程系,北京100084

出　　处：《清华大学学报（自然科学版）》1996年第5期12-16,共5页Journal of Tsinghua University(Science and Technology)

摘　　要：提出用非线性电流源法分析微波ＧａＡｓ ＭＥＳＦＥＴ振荡器单边带相位噪声特性的新方法。给出了包含ＭＥＳＦＥＴ完整非线性噪声模型在内的振荡器相位噪声分析模型，在此基础上利用改进的非线性电流源法分析了振荡器的单边带相位噪声特性。ＣＡＤ分析与实验结果表明，此法可精确有效地分析振荡器输出基波及各次谐波附近的近载相位噪声分布特性，且适用于非线性微波ＣＡＤ。This paper presents a new method to analyze the single--sideband (SSB) phase noise in microwave MESFET oscillators by nonlinear current method. A phase noise analysis model of the oscillators,which includes a complete nonlinear noise model of the MESFET,is given and used to simulate the accurate SSB phase noise characteristics of the oscillators. Comparison between simulation and experiment proves that this approach is very suitable for nonlinear microwave CAD and can be used very efficiently to predict accurate near--carrier phase noise around fundamental and harmonics of the oscillators.

关 键 词：相位噪声 微波振荡器 非线性电流源法 

分 类 号：TN752.5[电子电信—电路与系统]