热处理过程对HgCdTe光伏探测器性能的影响  

Effect of Thermal Process on Performance of HgCdTe Photovoltaic Detectors

作　　者：孙柏蔚[1] 胡晓宁[1] 

机构地区：[1]中国科学院上海技术物理研究所,上海200083

出　　处：《红外》2006年第1期21-25,共5页Infrared

摘　　要：本文论述了HgCdTe光伏探测器的I-V特性和暗电流机制,讨论了离子注入后退火、钝化后烘烤、倒焊互联后退火等热处理过程对HgCdTe光伏探测器性能的影响。The HgCdTe Photovoltaic Detector＇s I-V characteristics and the mechanism of dark current is presented in this paper. The effect of thermal processes like post-implantation annealing, postpassivation baking and post-bonding annealing on the performance of HgCdTe photovoltaic detectors is discussed.

关 键 词：HGCDTE光伏探测器 退火 烘烤 

分 类 号：TN36[电子电信—物理电子学]