射线法研究外腔半导体激光器的调谐范围  

Studying the tuning range of external cavity semiconductor lasers by ray trace method

作　　者：周小红[1] 陈建国[1] 卢玉村[1] 

机构地区：[1]四川联合大学

出　　处：《半导体光电》1996年第2期158-161,共4页Semiconductor Optoelectronics

摘　　要：利用由射线法导出的广义两段式半导体激光器的输出光谱的表达式，讨论了外腔式半导体激光器（ＥＣＬＤ）的调谐范围。当ＥＣＬＤ调谐到半导体激光二极管的共振波长附近振荡时，可以得到ＥＣＬＤ的最大调谐范围；当激光器调谐到半导体激光二极管的反共振波长附近振荡时，可以获得ＥＣＬＤ的准连续调谐范围；同时，还求得了实现准连续调谐所需的面向外腔的半导体二极管端面的反射率。The expression of the output spectrum from the two-segment semiconductor laser,deduced with the ray trace method,has been used to study the tuning range of the external cavity semiconductor lasers (ECLDs).The (maximum)tuning range of the ECLDs can be obtained when it is tuned to oscillate at the resonant wavelength of the solitary diode.If the ECLDs is tuned to lase at the anti-resonant wavelength of the solitary diode,the( maximum) muasi-continuous tuning range can be specified.In addition,the required reflectivity at the AR coated diode facet facing the ex ternal reflector to operate the ECLDs at the antiresonant wavelength of the solitary diode has been quantified.

关 键 词：半导体激光器 特性测试 调谐 反射率 

分 类 号：TN248.4[电子电信—物理电子学]