网格敏感区硅光探测器  

The Photodetector of Silicon with the Net Sensitive Range

作　　者：尹长松[1] 刘欢[1] 

机构地区：[1]武汉大学物理系,华中理工大学固电系

出　　处：《固体电子学研究与进展》1996年第2期110-113,共4页Research & Progress of SSE

摘　　要：研究了网格结构硅光敏二极管，在这种结构中，网格条区为ＰＮ结区，网格孔区为高电阻率衬底材料区。在反向工作电压作用下，网孔区将被耗尽，成为ＰＮ结与表面耗尽区结构统一的光探测器。测量表明，这种结构的器件是一种高响应度、宽光谱范围的光探测器件。Photodetector of silicon with net sensitive range has been investigated. The cross stripe range of the net is PN junction and the hole range of the net is substrate material with high resistivity. The hole range of the net will be depleted entirely under bias voltage. The structure becomes PIN and surface depletion layer structure. High responsibility and wide spectrum of the device are demonstrated by measuring.

关 键 词：光探测器 表面耗尽区 光敏二极管 响应度 

分 类 号：TN36[电子电信—物理电子学]