BiVO_4掺杂对(Bi_(1.5)Zn_(0.5))(Zn_(0.5)Nb_(1.5))O_7陶瓷介电性能的影响  

EFFECT OF BiVO_4 DOPING ON DIELECTRIC PROPERTIES OF (Bi_(1.5)Zn_(0.5))(Zn_(0.5)Nb_(1.5))O_7 CERAMICS

作　　者：周焕福[1] 黄金亮[1] 王茹玉[1] 殷镖[1] 孙道明[1] 

机构地区：[1]河南科技大学材料科学与工程学院,河南洛阳471003

出　　处：《硅酸盐学报》2005年第12期1453-1456,共4页Journal of The Chinese Ceramic Society

基　　金：教育部留学归国人员科研基金(200314)资助项目。~~

摘　　要：采用传统陶瓷工艺制备了Bi VO_4掺杂的(Bi_(1.5)Zn_(0.5))(Zn_(0.5)Nb_(1.5))O_7(bismuth zincate niobate,BZN)介质陶瓷,用X射线衍射、扫描电镜以及电感电容电阻测试仪等对其烧结特性、相结构及介电性能进行了系统研究。结果表明:Bi VO_4掺杂能显著降低BZN的烧结温度,由1000℃降至850℃,同时可优化频率温度系数τf,由-450×10-6/℃变为-254×10-6/℃。Bi VO_4的掺杂量为5%,烧结温度为900℃时,BZN陶瓷具有较好的介电性能:介电常数ε=153,品质因数Q=2100,频率温度系数τf=-350×10-6/℃。Dielectric ceramics （Bi1.5Zn0.5）（Zn0.5Nb1.5）O7 （bismuth zincate niobate , BZN） doped with BiVO4 were prepared by the conventional ceramic processing technology. The sintering behavior, crystal structure and dielectric properties of BiVO4- doped BZN ceramics were investigated systematically by X-ray diffraction, scanning electron microscopy and inductance-capacitance resistance analysis. The experimental results indicate that BiVO4 doping can decrease the sintering temperature remarkably （from 1 000 ℃ to 850℃ ） and optimize the temperature coefficient of the resonance frequency （changing from -450×10^-6/℃to -254×10^-6/℃）. The BZN ceramic with 5% BiVO4 doping sintered at 900 C has the optimum dielectric properties, i.e. a dielectric constant ε of 153, a quality factor Qof 2 100 and a temperature coefficient of resonance frequency τof -350×10^-6/℃.

关 键 词：锌铌酸铋陶瓷 钒酸铋掺杂 显微结构 介电性能 

分 类 号：TH145[一般工业技术—材料科学与工程]