器件质量级微晶硅薄膜光稳定性研究  

Stability of Device Grade Microcrystalline Silicon Materials for Solar Cells

作　　者：韩晓艳[1] 王岩[2] 薛俊明[2] 赵书文[1] 任慧志[2] 赵颖[2] 李养贤[1] 耿新华[2] 

机构地区：[1]河北工业大学材料科学与工程学院,天津300130 [2]南开大学光电子薄膜器件与技术研究所,天津300071

出　　处：《光电子．激光》2006年第1期24-27,共4页Journal of Optoelectronics·Laser

基　　金：国家"973"重大基础研究资助项目(G2000028202;G2000028203);教育部重大资助项目(02167);国家:863"重大资助项目(2002303261)

摘　　要：利用射频等离子体增强化学气相沉积(RF-PECVD)技术,通过改变SiH4浓度制备了一系列不同晶化率(Xc)的本征Si薄膜材料。通过测量其Raman谱和光、暗电导率(σph、σd)研究了工艺变化对材料结构的影响及材料光电特性同微观结构的关系,然后对样品进行老化实验,测量其光照前后的吸收系数α及量子效率、迁移率和寿命的乘积nμτ。分析其光照前后光电性能的变化规律结果表明,相变域附近的微晶硅(μc-Si∶H)薄膜材料适合制备μc-Si:H太阳电池;结合退火实验的结果发现,μc-Si∶H材料中的非晶成分是导致微晶材料光电特性衰退的主要原因。Silicon thin films with different crystalline ratio （Xc） had been deposited by varying silane content （SO） of reactive gases in the RF-PEOVD process. The effects of silane content on the performance of the materials and on the relationship between micro-structure and opto-electronic properties were studied by Raman measurements and σph,σd. Then the measurements of fore,during and after light near the transition region i that the amorphous region light absorption coefficient （α） and OPT were conducted besoaking. The results indicated that the microcrystalline silicon s suitable to prepare device grade microcrystalline silicon,and of the material is responsible to the light induced degradation.

关 键 词：射频等离子体增强化学气相沉积(RF-PECVD) 微晶硅(μc-Si:H)薄膜 稳定性 

分 类 号：O484[理学—固体物理]