Zn_xMg_(1-x)S多晶薄膜的制备及其特性研究  

Preparation and characteristics of Zn_xMg_(1-x)S polycrystalline thin films

作　　者：苗银萍[1] 孙汪典[1] 朱汉明[1] 

机构地区：[1]暨南大学物理学系,广东广州510632

出　　处：《真空》2006年第1期33-35,共3页Vacuum

摘　　要：采用真空蒸镀技术,在普通石英玻璃衬底上成功制备出固溶体ZnxM g1-xS多晶薄膜。用X射线能量色散谱仪、原子力显微镜、X射线衍射仪、紫外-可见分光光度计等对薄膜晶体成分、表面形貌、结构和光学性质做了分析。结果表明:当x=0.9时,固溶体ZnxM g1-xS晶体形貌生长和结晶性良好,为闪锌矿结构;由于镁成分的掺入,ZnxM g1-xS薄膜的(111)峰位相对于ZnS的(111)峰位向大角度方向移动0.14;°光学吸收边相对于ZnS产生了明显的蓝移,其禁带宽度增加0.19 eV,显示了作为短波光电器件材料和紫外探测材料的应用潜力。Solid-soluble polycrystalline Zn^Mg1-~S thin films were deposited on amorphous quartz glass substrates by vacuum evaporation, and their characteristics were investigated by AFM, XRD, EDS and UV-vislble absorption spectrum. The final morphology indicated that the Zn0.9Mg0.1S thin film is uniformly coated and its crystallization is of zinc-blende structure. The （111） peak will move slightly at a big angle due to Mg addition. The absorption band edge of Zn0.9Mg0.1S is obviously blue shifted relative to ZnS. The result indicated that ZnxMg1-xS is a promising materials for the short wavelength optoelectronic applications.

关 键 词：ZnxMg1-xS多晶薄膜 真空蒸发镀 紫外吸收 

分 类 号：O484.1[理学—固体物理]