Anticrossing Gap between Pairs of the Subbands in AlxGa1-xN/GaN Double Quantum Wells  

作　　者：雷双英 沈波 张国义 

机构地区：[1]School of Physics and State Key Laboratory for Mesoscopic Physics, Research Centre for Wide Gap Semiconductor, Peking University, Beijing 100871

出　　处：《Chinese Physics Letters》2006年第2期450-452,共3页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant Nos 60325413, 60136020, and 60444007, and the Research Fund for the Doctoral Programme of Higher Education of Chin under Grant No 20020284023.

摘　　要：Dependences of anticrossing gaps between pairs of subbands in Alx Ga1-xN/GaN double quantum wells （DQWs） on the width and the Al composition of the central barrier of the DQWs and on the well width of the DQWs have been investigated by solving the Schroedinger and Poisson equations self-consistently. It is found that the anticrossing gaps are not influenced by the polarization-induced electric field in the DQWs. The anticrossing gaps decrease with increasing the width and the Al composition of the central barrier of the DQWs, as well as with the increasing well width of the DQWs. According to the results of the calculation, the anticrossing gaps can reach 150 meV in AlxGa1-xN/GaN DQWs. There is significant coupling between the two wells of the DQWs when the width of the central barrier of the DQWs is narrower than 2nm.Dependences of anticrossing gaps between pairs of subbands in Alx Ga1-xN/GaN double quantum wells （DQWs） on the width and the Al composition of the central barrier of the DQWs and on the well width of the DQWs have been investigated by solving the Schroedinger and Poisson equations self-consistently. It is found that the anticrossing gaps are not influenced by the polarization-induced electric field in the DQWs. The anticrossing gaps decrease with increasing the width and the Al composition of the central barrier of the DQWs, as well as with the increasing well width of the DQWs. According to the results of the calculation, the anticrossing gaps can reach 150 meV in AlxGa1-xN/GaN DQWs. There is significant coupling between the two wells of the DQWs when the width of the central barrier of the DQWs is narrower than 2nm.

关 键 词：ALLOYS 

分 类 号：O413[理学—理论物理]