Dependence of Intrinsic Defects in ZnO Films on Oxygen Fraction Studied by Positron Annihilation  

作　　者：彭成晓 翁惠民 杨晓杰 叶邦角 成斌 周先意 韩荣典 

机构地区：[1]Department of Modern Physics, University of Science and Technology of China, Hefei 230026 [2]Key Laboratory of Nano-Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083

出　　处：《Chinese Physics Letters》2006年第2期489-492,共4页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under No 10425072.

摘　　要：Defects in ZnO films grown by radio-frequency reactive magnetron sputtering under variable ratios between oxygen and argon gas have been investigated by using the monoenergetie positron beam technique. The dominate intrinsic defects in these ZnO samples are O vacancies （Vo） and Zn interstitials （Zni） when the oxygen fraction in the O2/Ar feed gas does not exceed 70% in the processing chamber. On the other hand, zinc vacancies are preponderant in the ZnO films fabricated in richer oxygen environment. The concentration of zinc vacancies increases with the increasing O2 fraction. For the oxygen fraction 85%, the number of zinc vacancies that could trap positrons will be smaller. It is speculated that some unknown defects could shield zinc vacancies. The concentration of zinc vacancies in the ZnO films varies with the oxygen fraction in the growth chamber, which is in agreement with the results of photolurninescence spectra.Defects in ZnO films grown by radio-frequency reactive magnetron sputtering under variable ratios between oxygen and argon gas have been investigated by using the monoenergetie positron beam technique. The dominate intrinsic defects in these ZnO samples are O vacancies （Vo） and Zn interstitials （Zni） when the oxygen fraction in the O2/Ar feed gas does not exceed 70% in the processing chamber. On the other hand, zinc vacancies are preponderant in the ZnO films fabricated in richer oxygen environment. The concentration of zinc vacancies increases with the increasing O2 fraction. For the oxygen fraction 85%, the number of zinc vacancies that could trap positrons will be smaller. It is speculated that some unknown defects could shield zinc vacancies. The concentration of zinc vacancies in the ZnO films varies with the oxygen fraction in the growth chamber, which is in agreement with the results of photolurninescence spectra.

关 键 词：P-TYPE ZNO THIN-FILMS ROOM-TEMPERATURE PHOTOLUMINESCENCE DEPOSITION SUBSTRATE VACANCIES LAYER BEAM GAN 

分 类 号：O483[理学—固体物理]