厚膜压阻式传感器用钌系电阻器导电性能研究  

Study on conductive characteristics of Ru-based resistor for thick-film piezoresistive sensors

作　　者：陈建群[1] 马以武[1] 唐力强[1] 王正宏 

机构地区：[1]中国科学院合肥智能机械研究所传感技术国家重点实验室,安徽合肥230031

出　　处：《传感器与微系统》2006年第1期33-35,38,共4页Transducer and Microsystem Technologies

基　　金：国家自然科学基金资助项目(60374050)

摘　　要：探讨了厚膜压阻式传感器用钌系电阻器的灵敏特性和提高钌酸盐厚膜力敏电阻器灵敏系数S的方法。实验证明:钌酸盐厚膜电阻器的灵敏系数与电阻材料的物化特性、工艺条件密切相关。通过对RuO2脱水温度、合成B i2Ru2O7固相反应温度和时间控制,并进行导电相与玻璃相粒径大小的有效搭配以及纳米掺杂改性,提高厚膜力敏电阻器的灵敏系数,其值可以达到17左右,达到国际先进水平。The sensitive characteristics of the Ru-based resistor for thick-film piezoresistive sensor is summarized and how to increase the gauge factor is discussed. A close correspondence between the gauge factor and the physical and chemical characteristics is experimented. To control the range of dehydration temperature of RuO2 ,to control the temperature and time in the couse of solid compositive reactivity of Bi2Ru2O7, to attain the effective mixture of multiple paticle sizes of the conductive phase and the glass phase ,and charactertistics with addition can increase the gauge factor of the thick-film resistor. Its value can be about 17 ,which is up to international advance level.

关 键 词：厚膜压阻式传感器 导电性能 掺杂改性 灵敏系数 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置] TN4[自动化与计算机技术—控制科学与工程]