THE DESIGN OF HIGH PERFORMANCE LINEAR TRANSCONDUCTOR  

作　　者：Gao Qingyun Li Xuechu Qin Shicai 

机构地区：[1]Department of Microelectronics Science, Nankai University, Tianjin 300071, China

出　　处：《Journal of Electronics(China)》2006年第1期107-108,共2页电子科学学刊（英文版）

摘　　要：An improved structure of linear transconductor is presented in this paper. It is analyzed in theory and simulated with Spectre based on 0.25μm CMOS process. The simulation results show that the differential input voltage of the proposed transconductor is 4.0Vpp(peak to peak), whereas the differential input voltage of the existing source degeneration structure is 2.2Vpp, when their nonlinear errors are required to be less than 0.15%.An improved structure of linear transconductor is presented in this paper. It is analyzed in theory and simulated with Spectre based on 0.25μm CMOS process. The simulation results show that the differential input voltage of the proposed transconductor is 4.0Vpp（peak to peak）, whereas the differential input voltage of the existing source degeneration structure is 2.2Vpp, when their nonlinear errors are required to be less than 0.15%.

关 键 词：Design of CMOS circuit TRANSCONDUCTOR LINEARITY 

分 类 号：TN710[电子电信—电路与系统]