Compact all-optical switches based on photon-induced suppression of mode interference  

作　　者：李龙志 唐奕 杨建义 王明华 江晓清 

机构地区：[1]Department of Information and Electronic Engineering

出　　处：《Chinese Optics Letters》2006年第2期93-95,共3页中国光学快报（英文版）

基　　金：This work was supported by the National Natural Sci-ence Foundation of China (No. 60177012, 60477018)the Key Fund of National Natural Science Foundation of China (No. 60436020).

摘　　要：An optically activated optical switch based on suppression of mode interference （SMI） is presented. The imaging properties of multi-mode interference （MMI） section in the switch with Y-branch can be modified by a controlling light injection. The switch was simulated by finite difference beam propagation method （FD-BPM） and fabricated on GaAlAs/GaAs epitaxial materials. At the wavelength of 1.31 μm, the primary experiment showed an extinction ratio of about 8 dB with controlling light power density of 73.5 W/mm^2.An optically activated optical switch based on suppression of mode interference （SMI） is presented. The imaging properties of multi-mode interference （MMI） section in the switch with Y-branch can be modified by a controlling light injection. The switch was simulated by finite difference beam propagation method （FD-BPM） and fabricated on GaAlAs/GaAs epitaxial materials. At the wavelength of 1.31 μm, the primary experiment showed an extinction ratio of about 8 dB with controlling light power density of 73.5 W/mm^2.

关 键 词：Computer simulation Finite difference method Image quality Interference suppression Light extinction PHOTONS Semiconducting gallium arsenide Semiconducting gallium compounds 

分 类 号：TN253[电子电信—物理电子学]