Three-dimensional multilevel memory based on laser-polarization-dependence birefringence  

作　　者：程光华 刘青 王屹山 赵卫 陈国夫 

机构地区：[1]State Key Laboratory of Transient Optics and Photonics

出　　处：《Chinese Optics Letters》2006年第2期111-113,共3页中国光学快报（英文版）

基　　金：This work was supported by the Innovation Founda-tion of Chinese Academy of Sciences (No. 40001043)

摘　　要：The femtosecond laser-modified region in isot, ropic glass medium shows a big optical birefringence. Transmission of the birefringent regions between two crossed polarizers depends on phase retardation and the orientation angle of the birefringent optical axes. Based on this effect, three-dimensional （3D） multilevel memory was proposed and demonstrated for nonvolatile memory up to eight levels, in contrast to the standard two-level technology. Eight-level writing and reading are distinguishable in fused silica with a near-infrared femtasecond laser. The retention of this memorv is characterized for nonvolatile annlications.The femtosecond laser-modified region in isot, ropic glass medium shows a big optical birefringence. Transmission of the birefringent regions between two crossed polarizers depends on phase retardation and the orientation angle of the birefringent optical axes. Based on this effect, three-dimensional （3D） multilevel memory was proposed and demonstrated for nonvolatile memory up to eight levels, in contrast to the standard two-level technology. Eight-level writing and reading are distinguishable in fused silica with a near-infrared femtasecond laser. The retention of this memorv is characterized for nonvolatile annlications.

关 键 词：BIREFRINGENCE Glass Infrared radiation Light polarization Nonvolatile storage SILICA Three dimensional Ultrashort pulses 

分 类 号：TP333[自动化与计算机技术—计算机系统结构]