SWITCHING CHARACTERISTICS AND ANALYSIS OF RESONANT TUNNELING DIODES  

作　　者：张世林 朱怡 郭维廉 

机构地区：[1]SCHOOL OF ELECTRONIC INFORMATION ENGINEERING TIANJIN UNIVERSITY,TIANJIN 300072,CHINA

出　　处：《Transactions of Tianjin University》2006年第1期19-22,共4页天津大学学报（英文版）

基　　金：SUPPORTED BY NATIONAL NATURAL SCIENCE FOUNDATION OF CHINA( NO. 60177010).

摘　　要：Resonant tunneling diode （RTD） of AlAs/InGaAs/AlAs double barrier-single well structure was designed and fabricated. The devices showed current-voltage characteristics with peak-valley current ratio of 4 ： 1 at room temperature. The scattering parameter of RTD was measured by using an HP8510（C） network analyzer. Equivalent circuit parameters were obtained by curve fitting and optimized. The RTD switching time was estimated using the measured capacitance and average negative differential resistance. The minimum rise time of the sample was estimated to be 21 ps.AlAs/InGaAs/AlAs 双障碍单人赛井结构的反响的通道二极管(RTD ) 被设计并且制作。设备在房间温度显示出 4:1 的当前电压的特征 withpeak 山谷水流比率。RTD 的散布参数被使用一个 HP8510 (C) 网络分析器测量。相等的电路参数被恰当、优化的曲线获得。交换时间的 RTD 用测量电容和平均否定微分电阻被估计。样品的最小的上升时间被估计是 21 ps。

关 键 词：resonant tunneling diodes （ RTD） S parameter equivalent circuit switching time 

分 类 号：TN312.2[电子电信—物理电子学]