BIT/PLZT/BIT多层铁电薄膜结构设计及制备的实验研究  

Structural design and preparation of BIT/PLZT/BIT multilayer ferroelectric thin film

作　　者：易图林[1] 

机构地区：[1]空军雷达学院物理教研室,湖北武汉430019

出　　处：《物理实验》2006年第1期17-20,共4页Physics Experimentation

摘　　要：为了有效阻止锆钛酸铅镧(PLZT)与半导体界面发生反应和互扩散,根据锆钛酸铅镧和钛酸铋(B IT)各自的铁电性能,提出了一种新的设计思想———多层铁电薄膜.采用脉冲准分子激光淀积(PLD)方法制备了B IT/PLZT/B IT多层铁电薄膜.采用Sawyer-Tower电路测量,其剩余极化强度Pr=34μC/cm2,矫顽场Ec=40 kV/cm.这种结构吸收了锆钛酸铅镧和钛酸铋的优点,提高了铁电薄膜的铁电性能.In order to prevent reaction and mutual diffusion on PLZT-semiconductor interface, a new design of multilayer ferroelectric thin film is presented based on PLZT and BIT＇s ferroelectric characteristics. The multilayer ferroelectric thin film is prepared by pulsed excimer laser deposition. The Sanyer-Tower circuit can get the remanent polarization Pr =34μC/cm^2, coercive field strength Ec=40 kV/cm. The PLZT and BIT are of advantage to ferroelectric characteristics.

关 键 词：多层铁电薄膜 结构设计 脉冲准分子激光沉积 

分 类 号：TM22[一般工业技术—材料科学与工程] O484.1[电气工程—电工理论与新技术]