掺杂和气氛烧结对BiNbO_4材料性能的影响  

Effects of Doping and Sintering Atmosphere on the Properties of BiNbO_4 Materials

作　　者：毛羽[1] 丁士华[1] 姚熹[1] 张良莹[1] 

机构地区：[1]同济大学功能材料研究所,上海200092

出　　处：《压电与声光》2006年第1期79-81,共3页Piezoelectrics & Acoustooptics

基　　金：国家高新技术发展计划资助项目(2001AA325110);国家重点基础研究发展计划资助项目(2002CB613302);上海市重点学科建设项目资助项目

摘　　要：研究了掺杂Nd和在不同气氛中烧结对BiNbO4材料烧结特性及微波介电性能的影响。结果表明,掺杂Nd虽然会提高BiNbO4材料的介电常数εr,但会降低材料的微波介电性能。在O2和N2中烧结可获得烧结致密和较高εr的材料,但微波介电性能显著下降。在空气中,870℃烧结的Bi0.99Nd0.01NbO4材料有最佳的性能,即烧结密度ρ=6.947g/cm3,εr=42.84,Q×f=18 162(Q为品质因数,f为频率),谐振频率温度系数τf=3.18×10-6/℃。In this work, sinterability and microwave dielectric properties of BiNbO4 materials doped Nd under different sintering atmosphere were studied. The investigation results showed that microwave dielectric properties of BiNbO4 were deteriorate by doping Nd, although dielectric constants were increased, Materials sintered in O2 and N2 atmosphere have better sintering property and high εr, but microwave dielectric properties were impaired. Bi0.99 Nd0.01NbO4 material, sintering at 870 ℃ in air, exhibits the excellent properties：ρ=6.947g/cm^3, εr=42.84,Q×f=18 162, τ1=3.18×10^-6/℃.

关 键 词：BINBO4 微波介电性能 缺陷偶极子 

分 类 号：TM28[一般工业技术—材料科学与工程]