一种新颖的BiC MOS高精度LDO线性稳压电路  

A Novel BiCMOS Low-Dropout Linear Regulator with High Accuracy

作　　者：陈晓飞[1] 邹雪城[1] 刘三清[1] 张宾[1] 

机构地区：[1]华中科技大学电子科学与技术系,湖北武汉430074

出　　处：《微电子学》2006年第1期80-83,共4页Microelectronics

摘　　要：设计了一种改进结构的用于锂离子和锂聚合物电池充电管理芯片的高精度、宽电源电压范围LDO线性稳压电路,电路采用0.8μm N阱BiCMOS高压工艺制作。Hspice仿真结果表明,在温度从-20℃到100℃变化时,其温度系数约为±28 ppm/℃;电源电压从4.5 V到25 V变化时,最坏情况下其线性调整率为0.038 mV/V;负载电流从0到满载2 mA变化时,其负载调整率仅为1.28 mV/mA。A novel LDO linear voltage regulator with an improved structure is presented for Li-Ion and Li-poly mer battery charge management IC. Fabricated in a 0.8 μm N-well BiCMOS high-voltage technology, the device features high accuracy of voltage regulation. Hspice simulation shows that this circuit has a temperature coefficient of ±28 ppm/ ℃ for an ambient temperature from -20 ℃ m 100 ℃, a worst-case line regulation of 0. 038 mV/V for supply voltage from 4.5 V to 25 V, and a load regulation of 1.28 mV/mA for load current from 0 to 2 mA.

关 键 词：LDO 稳压电路 BICMOS 高压工艺 温度系数 线性调整率 负载调整率 

分 类 号：TN433[电子电信—微电子学与固体电子学]