Improvements of the Analytical Model of Monte Carlo  

作　　者：和青芳 徐征 滕枫 刘德昂 徐叙瑢 

机构地区：[1]Institute of Optoelectronic Technology, Beijing diaotong University, Beijing 100044 [2]Key Laboratory of Luminescence and Optical Information (Ministry of Education), Beijing Jiaotong University, Beijing 100044

出　　处：《Chinese Physics Letters》2006年第3期701-704,共4页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant Nos 60576016, 10374001 and 10434030, the National Key Basic Research and Development Programme of China under Grant No 2003CB314707, the Postdoctoral Science Foundation of China under Grant No 2003034324.

摘　　要：By extending the conduction band structure, we set up a new analytical model in ZnS. Compared the results with both the old analytical model and the full band model, it is found that they are possibly in reasonable agreement with the full band method and we can improve the calculation precision. Another important work is to reduce the programme computation time using the method of data fitting scattering rate curves.By extending the conduction band structure, we set up a new analytical model in ZnS. Compared the results with both the old analytical model and the full band model, it is found that they are possibly in reasonable agreement with the full band method and we can improve the calculation precision. Another important work is to reduce the programme computation time using the method of data fitting scattering rate curves.

关 键 词：FILM ELECTROLUMINESCENCE DEVICES ACCELERATION PROCESS ELECTRON-TRANSPORT ZNS SIMULATION SILICON 

分 类 号：TN919[电子电信—通信与信息系统]