Characteristics of surface and interface for ITO/PTCDA/p-Si thin film device  

作　　者：ZHENG Dai-shun ZHANG Xu QIAN Ke-yuan 

机构地区：[1]The Graduate School at Shenzhen, Tsinghua University, Shenzhen 518055, China [2]School of Mathematics and Informations, Gansu United University, Lanzhou 730000, China

出　　处：《Optoelectronics Letters》2006年第1期5-8,共4页光电子快报（英文版）

基　　金：Project is supported by the National Natural Science Foundationof China (Grant No 60076023)

摘　　要：Interface characteristics possess very important influence on the performance of thin film devices. ITO/ PTCDA/p-Si thin film device was set up with vacuum evaporation and sputter deposition method. The surface and interface electron states of ITO/PTCDA/p-Si were investigated by X-ray photoelectron spectroscopy （XPS） and argon ion beam etch techniques. Results indicate that at the interface of ITO/PTODA/p- Si,not only ITO/PTCDA-Si but also PDCDA-Si can produce diffusion. Moreover, the XPS spectra of each atom appear chemical shifts, and the chemical shifts of C1s and O1s are more remarkable.

关 键 词：薄膜装置 表面性质 接口界面 ITO/PTCDA/p-Si 光电子 

分 类 号：O484[理学—固体物理]