FeS_2薄膜成分与Fe膜硫化温度的关系  

Analysis of the relation of ferrum films' sulfidation temperature and the composition of pyrite films

作　　者：吴新坤[1] 翁臻臻[1] 郑明学[1] 钟南保[1] 程树英[1] 

机构地区：[1]福州大学物理与信息工程学院,福建福州350002

出　　处：《福州大学学报（自然科学版）》2006年第1期60-63,共4页Journal of Fuzhou University(Natural Science Edition)

基　　金：福建省教育厅科研资助项目(JA03009JB04046JB05063);福州大学科技发展基金资助项目(2005-XY-14)

摘　　要：采用真空热蒸发法在玻璃基片上沉积厚度约为500nm的铁膜，然后对铁膜在温度为553-673K的条件下恒温硫化6h，以制备二硫化铁薄膜．通过对所制备的薄膜进行结构和成分分析发现，当硫化温度为603-653K时，Fe膜硫化完全，所得薄膜为单一物相的FeS2薄膜，薄膜晶粒大小均匀，表面致密，S／Fe值为1．94-1．96，接近理想化学配比．About 500 nm thick Fe thin films were deposited on the glass substrate by thermal evaporation firstly, and then they were sulfurized at different temperatures to synthesize pyrite thin films. In order to study the effect of sulfidation temperature on the pyrite thin films, the Fe thin films were sulfurized at temperature of 553 - 673 K, respectively for 6 hours. The resulting films were characterized by X - ray diffract and microstructure analysis. It was found that ideal FeS2 films with S/Fe of 1.94 - 1.96 have been prepared under the optimum sulfidation temperature of about 603 - 653 K and the films are uniform and dense.

关 键 词：二硫化铁薄膜 硫化 成分 温度 

分 类 号：TM914.4[电气工程—电力电子与电力传动] TN405[电子电信—微电子学与固体电子学]