掺氮碳纳米管阵列的制备及其场发射特性  

Fabrication of Nitrogen-Doped Carbon Nanotube Arrays and Their Field Emission Properties

作　　者：柴扬[1] 于利刚[1] 王鸣生[1] 张琦锋[1] 吴锦雷[1] 

机构地区：[1]北京大学信息科学技术学院电子学系,北京100871

出　　处：《北京大学学报（自然科学版）》2006年第1期89-92,共4页Acta Scientiarum Naturalium Universitatis Pekinensis

基　　金：国家重点基础研究发展规划973项目(2001CB610503);国家自然科学基金重点项目(90206048;90406014和60231010);国家自然科学基金(50202002;60471007);北京市自然科学基金(4032012;4042017)资助项目

摘　　要：使用结构简单的单温炉设备,以二茂铁为碳源与催化剂,三聚氰胺为氮源在硅基底制备出了碳纳米管阵列。所得的碳纳米管为多壁结构,单根碳纳米管的平均直径为50nm,长度为15μm,有着很好的定向性。透射电子显微镜(TEM)和X射线光电子谱(XPS)分析表明所得的碳纳米管是氮掺杂的。利用场发射显微镜研究了掺氮碳纳米管阵列的平面场发射特性,相应的开启场强为1.60Vμm,场发射图像表明了其有较高的场发射点密度。Carbon nanotube （CNT） arrays have been produced on silicon substrate by an one-step route based on the pyrolysis of mixture of the ferrocene and melamine under well-chosen synthesis condition. Transmission electron microscope （TEM） and scanning electron microscope （SEM） studies showed the products were all multi-walled CNTs that are about 50 mn in diameter and about 15 μm in length, growing outward separately and perpendicularly to the substratc. X-ray photoelectron spectroscopy （XPS） and TEM studies revealed that the CNTs were nitrogen-doped. Field emission measurement suggested that the nitrogen-doped CNT arrays begin to emit electron at electric field of 1.60 V/μm, and field emission images exhibited the high emission sites density.

关 键 词：碳纳米管 掺杂 场发射 

分 类 号：TB383.1[一般工业技术—材料科学与工程]