Numerical study of self-heating effects of small-size MOSFETs fabricated on silicon-on-aluminum nitride substrate  

作　　者：DING Yan-Fang ZHU Ming ZHU Zi-Qiang LIN Cheng-Lu 

机构地区：[1]Department of Electronics Science and Technology, East China Normal University, Shanghai 200062, China [2]Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

出　　处：《Nuclear Science and Techniques》2006年第1期29-33,共5页核技术（英文）

基　　金：Supported by the Special Funds for Major State Basic Research Projects (No.G2000036506);the National Natural Science Foundation of China (No. 60476006)

摘　　要：Compared with bulk-silicon technology, silicon-on-insulator (SOI) technology possesses many advan-tages but it is inevitable that the buried silicon dioxide layer also thermally insulates the metal – oxide – silicon field-effect transistors (MOSFETs) from the bulk due to the low thermal conductivity. One of the alternative insulator to replace the buried oxide layer is aluminum nitride (AlN), which has a thermal conductivity that is about 200 times higher than that of SiO2 (320 W·m ? 1·K? 1 versus 1.4 W·m? 1·K? 1). To investigate the self-heating effects of small-size MOSFETs fabricated on silicon-on-aluminum nitride (SOAN) substrate, a two-dimensional numerical analysis is performed by using a device simulator called MEDICI run on a Solaris workstation to simulate the electri-cal characteristics and temperature distribution by comparing with those of bulk and standard SOI MOSFETs. Our study suggests that AlN is a suitable alternative to silicon dioxide as a buried dielectric in SOI and expands the appli-cations of SOI to high temperature conditions.Compared with bulk-silicon technology, silicon-on-insulator （SOI） technology possesses many advantages but it is inevitable that the buried silicon dioxide layer also thermally insulates the metal-oxide-silicon field-effect transistors （MOSFETs） from the bulk due to the low thermal conductivity. One of the alternative insulator to replace the buried oxide layer is aluminum nitride （A1N）, which has a thermal conductivity that is about 200 times higher than that of SiO2 （320 W·m^-1·K^-1 versus 1.4 W·m^-1·K^-1）. To investigate the self-heating effects of small-size MOSFETs fabricated on silicon-on-aluminum nitride （SOAN） substrate, a two-dimensional numerical analysis is performed by using a device simulator called MEDICI run on a Solaris workstation to simulate the electrical characteristics and temperature distribution by comparing with those of bulk and standard SOI MOSFETs. Our study suggests that AlN is a suitable alternative to silicon dioxide as a buried dielectric in SOI and expands the applications of SOI m high temperature conditions.

关 键 词：自热效应 微晶管制作 衬底 硅 铝 氮化物 

分 类 号：TN305.3[电子电信—物理电子学] TN403