InSb红外焦平面器件γ辐照损伤初步研究  

Primary Investigation of γ-Irradiation Damage to InSb Infrared Focal Plane Arrays

作　　者：朱建妹[1] 靳涛[2] 刘普霖[1] 唐红兰[1] 陈伯良[1] 

机构地区：[1]中国科学院上海技术物理研究所,上海200083 [2]中国科学院新疆理化技术研究所,新疆乌鲁木齐830003

出　　处：《红外技术》2006年第2期98-100,共3页Infrared Technology

摘　　要：用Co60作γ辐照源对InSb光伏二极管列阵和InSb凝视红外焦平面器件进行了高能辐照损伤实验。在5000rad剂量下观测到二极管优值因子RoA下降了一个数量级,从3.6×105～4.3×105??cm2下降到2.5×104～2.7×104??cm2。在10000rad及以上剂量观测到64×64元凝视焦平面热成像性能的显著退化。Experimental investigation of irradiation damage to InSb photodiode arrays and to 64 × 64 InSb infrared focal plane arrays have been carried out by using Co^60 as pray sources. A reduction of one order of magnitude of RoA, the figure of merit of the diodes, from 3.6 × 10^5～4.3 × 10^5Ω·cm^2 down to 2.5 × 10^4～ 2.7× 10^4 Ω·cm^2 was observed after a total dose of 5000 rad irradiation. Also, significant degradation of thermal imaging ability for 64 × 64 InSb staring focal plane arrays after total dose of 10000 rad irradiation or more was observed.

关 键 词：红外焦平面 辐照损伤 INSB Γ射线 

分 类 号：TN214[电子电信—物理电子学]