一种新型的正胶剥离技术及其应用  

A New-style Positive Photoresist Lift-off Techniques and Its Application

作　　者：信思树[1] 普朝光[1] 杨明珠[1] 杨培志[1] 

机构地区：[1]昆明物理研究所,云南昆明650223

出　　处：《红外技术》2006年第2期105-107,共3页Infrared Technology

摘　　要：介绍了在金属微细图形化制作中常用的两种方法：刻蚀和剥离,并比较了两者的优劣。开发了一种新型的正胶剥离技术,着重解决了传统的正胶剥离技术中所存在的较为严重的“二次污染”问题,提高了其剥离精度,达到2μm。最后介绍了新型的正胶剥离技术在实际工作中的应用。Two methods making fine-line metal pattern fabrication including etching and lift-off were introduced in this paper. The differences between etching and lift-off were compared. Then a New-style Positive Photoresist Lift-off Techniques was developed that can resolve the question of secondary pollution of the tradition Positive Photoresist lift-off techniques. The new technique improves its precision and arrives 2μm. Finally, the applications of the new technique in UFPA were introduced.

关 键 词：正胶 剥离技术 金属微细图形化 二次污染 

分 类 号：TN219[电子电信—物理电子学]