一种新的CMOS带隙基准电压源设计  

Design of a CMOS bandgap voltage reference

作　　者：徐静平[1] 熊剑波[1] 陈卫兵[1] 

机构地区：[1]华中科技大学电子科学与技术系,湖北武汉430074

出　　处：《华中科技大学学报（自然科学版）》2006年第2期36-38,共3页Journal of Huazhong University of Science and Technology(Natural Science Edition)

基　　金：国家自然科学基金资助项目(60376019)

摘　　要：设计了一种新的CMOS带隙基准电压源.通过采用差异电阻间温度系数的不同进行曲率补偿,利用运算放大器进行内部负反馈,设计出结构简单、低温漂、高电源抑制比的CMOS带隙基准电压源.仿真结果表明,在VDD=2 V时,电路具有4.5×10-6V/℃的温度特性和57 dB的直流电源抑制比,整个电路消耗电源电流仅为13μA.A high-order curvature-compensated CMOS bandgap reference was presented, in which a temperature-dependent resistor ratio generated by a high-resistive poly resistor and a diffusion resistor was used. The simulation results by Hspice showed that when VDD=2 V, this bandgap reference exhibited a temperature coefficient of 4.5 × 10^-6 V/℃ and PSRR of 57 dB, with total current consumption of power supply being less than 13μA.

关 键 词：带隙基准电压源 曲率补偿 CMOS 

分 类 号：TN7[电子电信—电路与系统]