低介电多孔薄膜的制备及形成机制研究  

Preparation and Forming Mechanism of Porous Film with Low Dielectric Constant

作　　者：徐洪耀[1] 王献彪[1] 吴振玉[1] 

机构地区：[1]安徽大学化学化工学院安徽省绿色高分子材料重点实验室,合肥230039

出　　处：《高等学校化学学报》2006年第1期104-107,共4页Chemical Journal of Chinese Universities

基　　金：国家自然科学基金(批准号:90206014;50472038);教育部'新世纪优秀人才支持计划'(批准号:NCET-04-0588);安微省优秀青年基金(批准号:04044060);安微省高层次优秀人才研究奖励基金(批准号:2004Z027)

摘　　要：利用硅烷偶联剂KH-570(γ-甲基丙烯酰氧基甲氧基硅烷)水解缩合生成的多面低聚倍半硅氧烷(POSS)溶胶为模板剂,经热解制备低介电多孔薄膜材料.使用FTIR对材料制备过程及形成机制进行动态研究,通过29S i NMR、椭偏仪、氮气吸脱附曲线和TEM等对材料的介电性质、孔洞大小和分布情况进行表征.制备的介电多孔薄膜材料孔洞分布均匀、孔径约1 nm,比表面积为384.1 m2/g,介电常数为2.5的低.POSS sol-gel as the. porous silica template was prepared by hydrolyzation and condensation of KH- 570（γ-methacryloxypropyhrimethoxy silane）. Porous film with a low dielectric constant was obtained by calcination of POSS template. The process and mechanism of film formation were investigated by I;TIR and its structure was characterized by ^29Si NMR. Ellipsometr, N2 adsorption-desorption and TEM. The results show that the film possesses uniform pore with about 1 nm size, dielectric constant 2. 5, and Sbet=384. 1 m^2/g and the effects of the surface modification reagent and it＇s caneentration on the dielectric property of film were discussed.

关 键 词：多孔薄膜 低介电常数 旋转涂布 

分 类 号：O647[理学—物理化学] O484.4[理学—化学]