电流退火对FEZRBCU软磁合金膜巨磁阻抗效应的影响  

The Influence of Current Annealing on GMI Effect of Soft Magnetic Alloy FeZrBCu Films

作　　者：邵先亦[1] 陈卫平[1] 

机构地区：[1]台州学院信息与电子工程学院物理系,浙江临海317000

出　　处：《台州学院学报》2005年第6期32-35,共4页Journal of Taizhou University

基　　金：浙江省教育厅科研项目(20050050)

摘　　要：采用射频溅射法在单晶硅基片上沉积了(FE88ZR7B5)0.97CU0.03软磁薄膜样品,对制备态样品进行了直流电流退火处理。结果表明,最佳退火电流为800 MA,在13 MHZ频率下,最大纵向巨磁阻抗比从制备态的8%上升到最佳退火态的17%,明显提高了巨磁阻抗效应和磁场响应灵敏度。详细分析和讨论了样品的巨磁阻抗效应随退火电流变化的特性和机理。The （ Fe88ZrTB5 ）0.97Cu0.03 films were deposited by radio frequency sputtering on the substrate of single crystal Silicon（Si） and the deposited samples were treated with DC Joule annealing subsequently. The results showed that the optimum annealing current was 800 mA, and that the maximum values of longitudinal GMI ratio increased from 8% at as - deposited state to 17% at annealed state at the frequency of 13 MHz. Moreover, the GMI effect and the sensitivity in response to magneto - field improved obviously. The characteristics and mechanism of the sample＇s GMI effect depending on the alternating current have been discussed in detail

关 键 词：巨磁阻抗效应 直流退火 各向异性场 

分 类 号：TB383.2[一般工业技术—材料科学与工程]