Si_2N_2O基体铌酸锂调制器有限元法研究  

Research on Lithium Nobate Modulator Based on Si_2N_2O Substrate by Finite Element Method

作　　者：李九生[1] 

机构地区：[1]浙江大学信息学院光及电磁波研究中心,杭州310027

出　　处：《光子学报》2006年第1期37-40,共4页Acta Photonica Sinica

基　　金：国家自然科学基金(60577023);中国博士后基金;光电信息技术科学教育部重点实验室开放课题基金资助

摘　　要：提出一种新型基于Si_2N_2O基体的Li NbO_3行波调制器,利用有限元方法对该调制器进行数值分析并获得调制器的优化结构尺寸·该新型调制器带宽达到120GHz,半波电压为3.5V,特性阻抗为50.2Ω.结果表明该调制器具有大的调制带宽和良好的阻抗匹配,在未来光通信中具有很好的应用前景·A novel LiNbO3 modulator based on Si2N2O substrate is proposed. Using the finite element method, the proposed modulator has been analyzed. The optimum structure parameters of the novel modulator are obtained. The modulator operates with a 3 dB optical bandwidth of 120 GHz, a half-wave driving voltage of 3.5 V,and characteristie impedance of 50. 32Ω. The results show that broad bandwidth and low half-wave speed optical fiber voltage can be achieved simultaneously. It is a promising candidate for future ultra-hightransmission system.

关 键 词：有限元法 调制器 铌酸锂 SI2N2O 

分 类 号：TN761[电子电信—电路与系统]