SIMS对氘靶钛膜中氘的分布研究  

STUDY ON DEUTERIUM DISTRIBUTION IN DEUTERIUM-TITANIUM TARGET BY SIMS

作　　者：李宏发[1] 翟国良[1] 

机构地区：[1]中国工程物理研究院核物理与化学研究所

出　　处：《原子能科学技术》1996年第1期65-68,共4页Atomic Energy Science and Technology

摘　　要：用负的ＳＩＭＳ分析技术进行Ｈ同位素相对含量随Ｔｉ膜深度变化的分析，获得了氘随膜深度变化的分布曲线。在接近膜表面的一个深度范围内，除有明显的Ｏ－、ＣＯ－和很微弱的ＯＨ－、ＯＤ－及ＣＨＯ－峰谱外，还有很大的Ｄ－二次离子质谱峰，氘的丰度估计约为９８％。在靶膜内部，氘的丰度达９９％以上。在接近膜与底衬交界面的地方，Ｄ－谱峰很小，Ｏ－谱峰为痕迹量。文章对分析结果进行了讨论。Hydrogen isotope depth profiles in the titanium film are measured by the negative SIMS technique. The obtained spectra show that in the surface layer, besides some obvious peaks for O,CO- and some very weak peaks for OH-, OD- and CHO-, there is a very large peak for the second ion of D. The abundance of deuterium in the surface layer is estimated to be about 98%. In the interior of the Ti film, the abundance of deuterium become up to 99 %. In the area near the interface between the film and the substrate appears a small D peak and peak of trace amount O-.The analytical results are discussed.

关 键 词：真空镀膜 SIMS 纵深分布 氘丰度 氘靶 钛膜 

分 类 号：TL503.4[核科学技术—核技术及应用]